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> IRF644 samsung original 250V n-channel mosfet TO220
IRF644 samsung original 250V n-channel mosfet TO220
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.
14A, 250V, RDS(on) = 0.28 @VGS = 10 V
Low gate charge ( typical 47 nC)
