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> HGTG27N120BN, 72A 1200V, n-channel, igbt
HGTG27N120BN, 72A 1200V, n-channel, igbt
HGTG27N120BN, 72A, 1200V, NPT Series N-Channel IGBT, 3 Pin TO-247, Fairchild Semiconductor.
Insulated Gate Bipolar Transistor
The HGTG27N120BN is a Non- Punch Through (NPT) IGBT design. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
* 1200V Switching SOA Capability
* Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150 C
