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25PCS voltage speed switch npn silicon transistor C5027
High Voltage & Reliability Speed Switching triode c5027 replace KSC5027
High Voltage & High Reliability High Speed Switching triode c5027 replace KSC5027
http://pdf.dzsc.com/C50/C5027.pdf
the following is copied from datasheet:
?2000 Fairchild Semiconductor International Rev. A, February 2000
Absolute Maximum Ratings TC=25 C unless otherwise noted
Electrical Characteristics TC=25 C unless otherwise noted
VCBO Collector-Base Voltage 1100 V
VCEO Collector-Emitter Voltage 800 V
ICP Collector Current (Pulse) 10 A
PC Collector Dissipation ( TC=25 C) 50 W
TJ Junction Temperature 150 C
TSTG Storage Temperature - 55 ~ 150 C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, RBE = 800 V
BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
VCEX(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1 = -IB2 = 0.3A
ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 A
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 A
DC Current Gain VCE = 5V, IC = 0.2A
VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 2 V
VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 60 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.2A 15 MHz
High Voltage and High Reliability
?2000 Fairchild Semiconductor International
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Switching Time Figure 6. Safe Operating Area
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
tON, tSTG, tF [ s], TIME IC[A], COLLECTOR CURRENT
Typical Characteristics (Continued)
Figure 7. Reverse Bias Operating Area Figure 8. Power Derating
?2000 Fairchild Semiconductor International Rev. E
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