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Stmicro M29W040B90K6 4MBIT flash memory
STmicro M29W040B90K6 4Mbit Flash Memory
The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W040B is fully backward compatible with the M29W040.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are writ- ten to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
* Single 2.7 to 3.6V supply for all operations
* Programming Time: 10 s per Byte typical
* 8 uniform 64K byte memory blocks
* Program / erase controller
* Erase, suspend, and resume modes
* Standby and Automatic Standby
* 100,000 program/erase cycles per block
* Defectivity below 1 ppm/year
