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> 2N6308 npn power transistor
2N6308 npn power transistor
The 2N6308 is a silicon NPN transistor in a TO3 type package designed for high voltage, high
speed, power switching in inductive circuits where fall time is critical. Typical applications include
switching regulators, PWM inverters, solenoid and relay drivers.
Collector Emitter Voltage (IB = 0), VCEO 325V
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Collector Emitter Voltage (VBE = 0), VCES 800V
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Total Power Dissipation (TC +25 C), Ptot 100W
Operating Junction Temperature, TJ +200 C
Storage Temperature Range, Tstg 65 to +200 C
Thermal Resistance, Junction to Case, R1.75 C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
